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| F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor Low-Current Low Gate Leakage Current High Input Impedance Low-Noise 10 mA +150C - 65C to +175C D G Absolute maximum ratings at 25C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts Device in this Databook based on the NJ1800DL Process. Datasheet IF1801 S Die Size = 0.052" X 0.052" All Bond Pads 0.004" Sq. Substrate is also Gate. At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss eN 350 160 50 0.7 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 - 0.1 Min - 15 Typ - 25 - 30 - 100 800 -4 Max Unit V pA mA V NJ1800DL Process Test Conditions IG = - 1 A, VDS = OV VGS = - 10V, VDS = OV VDS = 10V, VGS = OV VDS = 10V, ID = 1 nA VDS = 10V, VGS = OV ID = 1 mA, VGS = OV VDS = 10V, VGS = OV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/HZ VDG = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-47 NJ1800DL Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = 2.3 V Gfs as a Function of VGS(OFF) 500 Transconductance in mS 500 VGS = O V Drain Current in mA 400 VGS = -0.5 V 300 VGS = -1.0 V 200 VGS = -1.5 V 100 VGS = -2.0 V 0 2 4 6 8 400 300 200 100 0 -1 -2 -3 -4 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA 1000 800 600 400 200 Transconductance in mS 350 300 250 200 150 100 0 -1 -2 -3 -4 0 Gfs as a Function of IDSS 20 40 60 80 Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA Noise as a Function of Frequency 3.0 ENoise Voltage in nV/Hz Input Capacitance in pF 2.5 2.0 1.5 1.0 0.5 10 100 1K Frequency in Hz 10K 100K IDSS = 40 mA VDG = 4 V ID = 5 mA 600 500 400 300 200 100 0 Input Capacitance as a Function of VGS VDS = O V -4 -8 - 12 - 16 Gate Source Voltage in Volts |
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